| Weight | 144.645 g/mol |
|---|---|
| Formula | AsGa |
| Hydrogen Acceptors | 0 |
| Hydrogen Donors | 0 |
| Aromatic Rings | 0 |
| Rotatable Bonds | 0 |
GALLIUM ARSENIDE (1303-00-0)
GaAs · gallium arsenate
Score:
#634 in Physics
,
#1841 in Chemistry
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- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV (Physical Review B, 1983)
- GaAs, AlAs, and AlxGa1xAs: Material parameters for use in research and device applications (Journal of Applied Physics, 1985)
- (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs (Applied Physics Letters, 1996)
- Semiconducting and other major properties of gallium arsenide (Journal of Applied Physics, 1982)
- Direct formation of quantumsized dots from uniform coherent islands of InGaAs on GaAs surfaces (Applied Physics Letters, 1993)
- Vertically self-organized InAs quantum box islands on GaAs(100). (Physical Review Letters, 1995)
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Predict GHS Hazards for Any Chemical in silico.
Including Acute Oral Tox, Skin Sensitization, Eye Irritation, Aquatic Tox, & more. - H331: Toxic if inhaled
Danger Acute toxicity, inhalation - Category 3 - H350: May cause cancer
Danger Carcinogenicity - Category 1A, 1B - H360: May damage fertility or the unborn child
Danger Reproductive toxicity - Category 1A, 1B - GaAs
- gallium arsenate
-
SMILES[Ga]#[As]
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InChIKeyJBRZTFJDHDCESZ-UHFFFAOYSA-N
- Pubchem - GALLIUM ARSENIDE
- Wikipedia - gallium arsenide
Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a Zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.
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